Abstract—Graphene Nano-Sheet Field Effect Transistor (GNSFET) is designed using a new material (graphene) in the channel, marking advancement in Nano-Sheet Field Effect Transistor (NSFET) technology. The device’s analog/Radio Frequency (RF) performance are evaluated with respect to the main geometric parameters of GNSFET, such as the gate-length, the channel-width, and the channel- thickness. Key analog/RF performance metrics, including the following: I_ON/I_OFF ratio, subthreshold-swing SS, transconductance g_m, transconductance efficiency g_m/I_d, output conductance g_ds, gate capacitance C_gg, cut-off frequency F_T, and intrinsic gain A_v. Output results reveal that scaling-down T_ch to 6 nm, W_ch to 14 nm, and L_g to 16 nm enhances the I_ON/I_OFF ratio to 5.2×1011 and reduces SS to 60.05 mV/dec, which creates better switching efficiency. Reducing T_ch from 8 nm to 6 nm, and W_ch from 18 nm to 12 nm boosts the I_ON/I_OFF ratio by 34.48% and 33.19%, respectively, highlighting the main role of device’s small geometry in improving electrostatic control. Transconductance g_m increases by 22.51% when L_g is scaled from 16 nm to 12 nm, while C_gg decreases with reductions in L_g, W_ch, and T_ch, aligning with graphene’s inherent high carrier mobility. Notably, F_T improves by 11.71% under T_ch scaling, underscoring graphene’s potential for high-frequency RF applications. Although, intrinsic-gain (A_v) benefits from W_ch and T_ch scaling, it exhibits a significant augmentation of 38.88% when L_g is increased from 12 nm to 16 nm, reflecting a trade-off between gain optimization and speed.