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Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

Suvashan Pillay and Viranjay M. Srivastava
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban-4041, South Africa

Abstract—This research work designs the class-AB amplifier with the application of Double-Gate (DG) MOSFET, which provides insight on how the amplifier can be utilized, in accordance with its future design. Main consideration is the use of DG MOSFET in audio amplifier design, for its low power and low noise application, voltage regulation for high to low power, etc. The challenge of this design is an attempt to use the DG MOSFET as prominent component, to demonstrate it as a usable in common electronic applications. Model of class-AB amplifier using the DG MOSFET (for audio amplifier) has been designed, fabricated, and thereafter analysed with its frequency and power characteristics. This proposed design with 2 Wrms audio amplifier drives a nominal 8 Ω load by a 100 mVrms input signal, for the typical audio frequency range of 20 Hz – 20 kHz. 

Index Terms—Class-AB amplifier, double-gate MOSEFT, low power device, microelectronics, transistor, VLSI

Cite: Suvashan Pillay and Viranjay M. Srivastava, "Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 9, No. 6, pp. 399-408, November 2020. Doi: 10.18178/ijeetc.9.6.399-408

Copyright © 2020 by the authors. This is an open access article distributed under the Creative Commons Attribution License (CC BY-NC-ND 4.0), which permits use, distribution and reproduction in any medium, provided that the article is properly cited, the use is non-commercial and no modifications or adaptations are made.