Dalian Maritime University, China
It is my honor to be the editor-in-chief of IJEETC. The journal publishes good papers which focus on the advanced researches in the field of electrical and electronic engineering & telecommunications.
Abstract—This research work designs the class-AB amplifier with the application of Double-Gate (DG) MOSFET, which provides insight on how the amplifier can be utilized, in accordance with its future design. Main consideration is the use of DG MOSFET in audio amplifier design, for its low power and low noise application, voltage regulation for high to low power, etc. The challenge of this design is an attempt to use the DG MOSFET as prominent component, to demonstrate it as a usable in common electronic applications. Model of class-AB amplifier using the DG MOSFET (for audio amplifier) has been designed, fabricated, and thereafter analysed with its frequency and power characteristics. This proposed design with 2 Wrms audio amplifier drives a nominal 8 Ω load by a 100 mVrms input signal, for the typical audio frequency range of 20 Hz – 20 kHz.
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