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Realization with Fabrication of Double-Gate MOSFET Based Buck Regulator

Simone Leeuw and Viranjay M. Srivastava
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban-4041, South Africa

Abstract—The traditional buck regulator provides the steady output voltage with high efficiency and low power dissipation. Various parameters of this regulator can be improved by the placement of Double-Gate (DG) MOSFET. The double-gate MOSFET provides twice the drain current flow, which improves the various parameters of buck regulator structure and inevitably increases the device performance and efficiency. In this research work, these parameters have been analyzed with implemented DG MOSFET buck regulator and realized the total losses 42.676 mW and efficiency 74.208%. This research work has designed a DG MOSFET based buck regulator with the specification of input voltage 12 V, output voltage 3.3 V, maximum output current 40 mA, switching frequency 100 kHz, ripple current of 10%, and ripple voltage of 1%.

Index Terms—Double-Gate MOSFET, regulator, buck regulator, transistor, microelectronics, VLSI

Cite: Simone Leeuw and Viranjay M. Srivastava, "Realization with Fabrication of Double-Gate MOSFET Based Buck Regulator," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 10, No. 1, pp. 66-75, January 2021. Doi: 10.18178/ijeetc.10.1.66-75

Copyright © 2021 by the authors. This is an open access article distributed under the Creative Commons Attribution License (CC BY-NC-ND 4.0), which permits use, distribution and reproduction in any medium, provided that the article is properly cited, the use is non-commercial and no modifications or adaptations are made.