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Realization with Fabrication of Double-Gate MOSFET Based Third Order High Pass Filter

Sashin Ramdhani and Viranjay M. Srivastava
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban-4041, South Africa

Abstract—This research work designs a third order high pass filter with the replacement of traditional MOSFET and amplifiers with double-gate (DG) MOSFET. A theoretical background for the fundamental concepts involved in this work has been analyzed. Thereafter, mathematical analysis of circuit design based on the fundamental concepts has been conducted, simulated, and finally fabricated. The objective of this research work is to improve the filter specifications via application of DG MOSFETs. The system has been designed for corner frequency (fc) = 10 kHz, the gain ≥ unity. The components in the stopband (f < 0.01fc) have at least -20 dB attenuation with the bandwidth greater than 1.5 MHz. 
Index Terms—Double-gate MOSFET, filter design, gate engineering, high pass filter, microelectronics, transistor, VLSI

Cite: Sashin Ramdhani and Viranjay M. Srivastava, "Realization with Fabrication of Double-Gate MOSFET Based Third Order High Pass Filter," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 9, No. 4, pp. 213-222, July 2020. Doi: 10.18178/ijeetc.9.4.213-222

Copyright © 2020 by the authors. This is an open access article distributed under the Creative Commons Attribution License (CC BY-NC-ND 4.0), which permits use, distribution and reproduction in any medium, provided that the article is properly cited, the use is non-commercial and no modifications or adaptations are made.