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Top and Bottom Gate Oxide Thicknesses Dependent Subthreshold Swing in Asymmetric Junctionless Double Gate MOSFET

Hakkee Jung
Department of Electronic Engineering, Kunsan National University, Gunsan, Republic of Korea
Abstract—We investigate the dependence of the Subthreshold Swing (SS) of asymmetric junctionless double gate MOSFETs on the top gate oxide thickness tox1 and the bottom gate oxide thickness tox2. The Poisson equation is used to derive the channel potential distribution of the transistor to the analytical series form, and the analytical subthreshold swing is obtained using series type potential distribution. This model is found to be in good agreement with the 2D simulation. In the asymmetric structure, since the gate oxide thicknesses at the top and bottom sides can be made different, the oxide film thickness dependency can be compared with that of the symmetric structure which has identical top and bottom gate oxide film thicknesses. As a result, we observes that the geometric mean of the top and bottom gate oxide thicknesses is linearly proportional to the subthreshold swing. In other words, we derive the relationship of , and observe that the proportional constant K changes with channel length and channel thickness. It is found that as the channel length decreases and the channel thickness increases, it increases sharply. It is also found that the K changes with more sensitivity to channel thickness than to channel length.
 
Index Terms—asymmetric, geometric mean, junctionless, subthreshold swing, oxide thickness

Cite: Hakkee Jung, "Top and Bottom Gate Oxide Thicknesses Dependent Subthreshold Swing in Asymmetric Junctionless Double Gate MOSFET," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 8, No. 5, pp. 292-296, September 2019. Doi: 10.18178/ijeetc.8.5.292-296
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