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13.56 MHz Highly-Efficient Power Conditioning Unit Using an Active Rectifier and LDO for Implantable Medical Devices (IMD)

Rovil S. Berido and Allenn C. Lowaton
Mindanao State University-Iligan Institute of Technology, Microelectronics Laboratory, Iligan City, Philippines
Abstract—This paper presents a highly-efficient power conditioning unit using 65 nm CMOS technology for inductively-powered Implantable Medical Device (IMD). The unit is comprised of an active rectifier and a low drop-out regulator (LDO) which together, provides a stable 3 V (30 mW power) to the IMD (load). The active rectifier is equipped with an integrated offset compensation control in the rectifier comparator. Other published works require off chip signals that are necessary for the comparator to work. This paper has all the comparator components integrated on chip. Operating at 13.56 MHz frequency and with peak input voltage of 3.6V, the rectifier has high power conversion efficiency (PCE) of 90%. The LDO has also a high PCE of 89%. Together, the rectifier and the LDO form a high PCE power conditioning unit for a 30 mW IMD.
 
Index Terms—active rectifier, LDO, IMD, inductive power transmission, 13.56MHz ISM band

Cite: Rovil S. Berido and Allenn C. Lowaton, "13.56 MHz Highly-Efficient Power Conditioning Unit Using an Active Rectifier and LDO for Implantable Medical Devices (IMD)," International Journal of Electrical and Electronic Engineering & Telecommunications,  Doi: 10.18178/ijeetc.180214
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