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STUDY OF PARAMETERS OF DIAMOND BASED DDR IMPATT DIODE

M N Naveen Kumar and D Gopi Chand
Visvesvaraya National Institute of Technology, Nagpur, India.

Abstract—In this paper we have studied the basic parameters of the DDR structure of diamond based IMPATT diode at Ka band. The temperature dependence of carrier mobility and carrier velocity, the variation of generation rate and quality rate with the change in ionization constant are observed. This paper helps to choose the optimal temperature range, as well as quality rate of oscillation.

Index Terms—IMPATT diode, Carrier mobility, Carrier velocity, Temperature, Quality rate of oscillation, Generation rate

Cite: M N Naveen Kumar and D Gopi Chand, "STUDY OF PARAMETERS OF DIAMOND BASED DDR IMPATT DIODE," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 6, No. 2, pp. 67-72, April 2017.