Nanyang Technological University, Singapore
It is my honor to be the editor-in-chief of IJEETC. The journal publishes good papers which focous on the advanced researches in the field of electrical and electronic engineering & telecommunications.
Abstract—In this paper we have studied the basic parameters of the DDR structure of diamond based
IMPATT diode at Ka band. The temperature dependence of carrier mobility and carrier velocity,
the variation of generation rate and quality rate with the change in ionization constant are observed.
This paper helps to choose the optimal temperature range, as well as quality rate of oscillation.
Index Terms—IMPATT diode, Carrier mobility, Carrier velocity, Temperature, Quality rate of
oscillation, Generation rate
Cite: M N Naveen Kumar and D Gopi Chand, "STUDY OF PARAMETERS OF DIAMOND BASED
DDR IMPATT DIODE," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 6, No. 2, pp. 67-72, April 2017.
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