Abstract—In the information, science and technology such as computer science, telecommunication, processing of the signals or images transmission the field effect transistor plays a major role. In this paper, we have determined the comparative study of various qualities of GaN and GaAs MESFET here we have presented the result of calculating the influence of gate length on input and output impedance of GaAs and GaN MESFET, these two physical models are based on the analysis of iterative method in the active region under the gate. The theoretical results based on analytical expression that we have established are discussed and compared with those of result.

Index Terms—Keywords: Image transmission, Iterative method, Influence of gate, Telecommunication, Gate lengths

Cite: Namrata Soni and Kanchan Cecil, "COMPARATIVE STUDY OF GaN AND GaAs MESFET," International Journal of Electrical and Electronic Engineering & Telecommunications, Vol. 3, No. 4, pp. 30-34, October 2014.